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Silicon carbide transistor maker UnitedSiC bought by Qorvo
https://www.electronicsweekly.com/news/business/silicon-carbide-transistor-maker-unitedsic-bought-qorvo-2021-11/
New Jersey Silicon carbide power transistor maker UnitedSiC has been acquired by Qorvo – the combined company formed by the merger of TriQuint and RF Micro Devices in 2015. To be called Qorvo’s Power Device Solutions, it will be led by Chris Dries, formerly president and CEO of UnitedSiC. “The acquisition of United Silicon Carbide expands ...
A Class D Audio Amplifier as an Application for Silicon ...
https://www.eti.uni-siegen.de/imt_as/forschung/pwmforaudio/pcim12_-_paper.pdf
1.3. Silicon Carbide and Class D Audio The physical and electronic properties of silicon carbide (like a high electrical breakdown field, wider band gap, higher thermal conductivity and higher saturated electron drift velocity) offer several advantages for the switching device compared to conventional silicon devices that are well known from [2].
SJEP120R100A datasheet - * JFET, SIC, AUDIO, 1200V, 17A ...
https://www.digchip.com/datasheets/3287316-sjep120r100a-silicon-carbide.html
Silicon carbide JFETs target high-end audio: Description * JFET, SIC, AUDIO, 1200V, 17A, TO247 * Transistor Type:JFET * Gate-Source Cutoff Voltage Vgs(off) Max:15V * Power Dissipation Pd:114W * Operating Temperature Range:-55°C to +150°C * Transistor Case Style:TO-247 * No. of Pins:3: Company: Semisouth Laboratories Datasheet
Investigating the Benefit of Silicon Carbide for a Class D ...
https://www.eti.uni-siegen.de/imt_as/forschung/pwmforaudio/sicforclassd_hp.pdf
Grifone Fuchs et al. The Benefit of Silicon Carbide for Class D Audio Page 2 of 8 Shorter delay times and a quicker turn-off process permit a smaller dead time for switching the half bridge transistors. Reduced blanking times emend PWM timing and allow higher duty cycle variations. Relating to this, the quality of the audio signal is enhanced. Due
What is a Silicon Carbide MOSFET | Wolfspeed
https://www.wolfspeed.com/knowledge-center/article/what-is-a-silicon-carbide-mosfet/
Silicon carbide is now the dominating semiconducting material used in MOSFETs because it provides several advantages over silicon. When compared to silicon as a semiconductor, silicon carbide uses energy more efficiently, can conduct generated heat away from the device more easily, will support a higher current density, performs more reliably at …
Harsh Environment Silicon Carbide Metal- Semiconductor ...
https://www2.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-234.pdf
channel silicon carbide metal-semiconductor field-effect transistors and the device performances are characterized from room temperature to 550 °C. These devices are made along with the fabrication process of silicon carbide junction field-effect transistors.
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